The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Feb. 27, 2013
Yen-lin Lai, Tainan, TW;
Shen-jie Wang, Tainan, TW;
Yu-chu LI, Tainan, TW;
Jyun-de Wu, Tainan, TW;
Ching-liang Lin, Tainan, TW;
Kuan-yung Liao, Tainan, TW;
Yen-Lin Lai, Tainan, TW;
Shen-Jie Wang, Tainan, TW;
Yu-Chu Li, Tainan, TW;
Jyun-De Wu, Tainan, TW;
Ching-Liang Lin, Tainan, TW;
Kuan-Yung Liao, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.