The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Sep. 23, 2011
Applicants:

Ji Hyung Moon, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Chung Song Kim, Seoul, KR;

Kwang Ki Choi, Seoul, KR;

June O Song, Seoul, KR;

Inventors:

Ji Hyung Moon, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Chung Song Kim, Seoul, KR;

Kwang Ki Choi, Seoul, KR;

June O Song, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); F21K 99/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); H01L 27/153 (2013.01); H01L 33/20 (2013.01); F21K 9/00 (2013.01);
Abstract

The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.


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