The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Feb. 03, 2011
Haruka Shimizu, Kodaira, JP;
Natsuki Yokoyama, Mitaka, JP;
Haruka Shimizu, Kodaira, JP;
Natsuki Yokoyama, Mitaka, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench junction FET using a silicon carbide substrate, nitrogen is introduced into a sidewall and a bottom surface of a trench, thereby forming an n type layer and an ntype layer on a surface of the trench. In this manner, the pn junction region corresponding to the junction region between a ptype gate region and an ntype source region is exposed on a main surface of a semiconductor substrate instead of on the damaged sidewall of the trench, and also the exposed region thereof is narrowed. Accordingly, the leakage current in the pn junction region can be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile