The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 28, 2010
Naoyasu Iketani, Osaka, JP;
Tomohiro Nozawa, Osaka, JP;
Yoshiaki Nozaki, Osaka, JP;
John K. Twynam, Osaka, JP;
Hiroshi Kawamura, Osaka, JP;
Keiichi Sakuno, Osaka, JP;
Naoyasu Iketani, Osaka, JP;
Tomohiro Nozawa, Osaka, JP;
Yoshiaki Nozaki, Osaka, JP;
John K. Twynam, Osaka, JP;
Hiroshi Kawamura, Osaka, JP;
Keiichi Sakuno, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This composite semiconductor device has a normally-on first field effect transistor and a normally-off second field effect transistor connected in series between first and second terminals, gates of the first and second field effect transistors being connected to second and third terminals, respectively, and N diodes being connected in series in a forward direction between a drain and a source of the second field effect transistor. Therefore, a drain-source voltage (Vds) of the second field effect transistor can be restricted to a voltage not higher than a withstand voltage of the second field effect transistor.