The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 07, 2012
Yuji Kishida, Hyogo, JP;
Takahiro Kawashima, Osaka, JP;
Arinobu Kanegae, Kyoto, JP;
Genshirou Kawashi, Chiba, JP;
Yuji Kishida, Hyogo, JP;
Takahiro Kawashima, Osaka, JP;
Arinobu Kanegae, Kyoto, JP;
Genshirou Kawashi, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Abstract
A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×10cm.