The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 19, 2011
Koji Usuda, Yokohama, JP;
Tsutomu Tezuka, Tsukuba, JP;
Koji Usuda, Yokohama, JP;
Tsutomu Tezuka, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes: a substrate; a first semiconductor layer formed on the substrate and having a strain; a second and a third semiconductor layers formed at a distance from each other on the first semiconductor layer, and having a different lattice constant from a lattice constant of the first semiconductor layer; a gate insulating film formed on a first portion of the first semiconductor layer, the first portion being located between the second semiconductor layer and the third semiconductor layer; and a gate electrode formed on the gate insulating film. At least one of outer surface regions of the second semiconductor layer and a second portion of the first semiconductor layer is a first silicide region, and at least one of outer surface regions of the third semiconductor layer and a third portion of the first semiconductor layer is a second silicide region, the second and third portions being located immediately below the second and third semiconductor layers respectively.