The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Oct. 04, 2010
Yukihiro Sakotsubo, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yuko Yabe, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
Yukihiro Sakotsubo, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yuko Yabe, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.