The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 28, 2012
International Business Machines Corporation, Armonk, NY (US);
Solomon Assefa, Ossining, NY (US);
Tymon Barwicz, Yorktown Heights, NY (US);
Swetha Kamlapurkar, Ossining, NY (US);
Marwan H. Khater, Astoria, NY (US);
Steven M. Shank, Essex Junction, NY (US);
Yurii A. Vlasov, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile