The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Nov. 12, 2010
Applicants:

Athanasios J. Syllaios, Richardson, TX (US);

Michael F. Taylor, Coppell, TX (US);

Sameer K. Ajmera, Richardson, TX (US);

Inventors:

Athanasios J. Syllaios, Richardson, TX (US);

Michael F. Taylor, Coppell, TX (US);

Sameer K. Ajmera, Richardson, TX (US);

Assignee:

L-3 Communications Corp., New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A center region of conductive material/s may be disposed or 'sandwiched' between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.


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Syllaios, Athanasios. (2014). Transitioned film growth for conductive semiconductor materials (U.S. Patent No. 8765514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8765514

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