The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Jun. 05, 2012
Applicants:

Andres Fernandez, San Francisco, CA (US);

Shaunak Roy, Sunnyvale, CA (US);

Jay Shafto, Mountain View, CA (US);

Norman L. Burns, Sunnyvale, CA (US);

Claudia Richter, Sunnyvale, CA (US);

Pierre F. Indermuhle, Berkeley, CA (US);

Inventors:

Andres Fernandez, San Francisco, CA (US);

Shaunak Roy, Sunnyvale, CA (US);

Jay Shafto, Mountain View, CA (US);

Norman L. Burns, Sunnyvale, CA (US);

Claudia Richter, Sunnyvale, CA (US);

Pierre F. Indermuhle, Berkeley, CA (US);

Assignee:

Complete Genomics, Inc., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of preparing organosilane-functionalized regions on a substrate surface and more specifically fabricating patterned functionalized substrates suitable to be optically read, the methods generally comprising employing a vapor deposition process of an organosilane gas onto a lithographically patterned silicon surface followed by removal of the patterning media in a bath of organic solvents and ultrasonic excitation. The inventive methods provide optimized surface density of functional species while avoiding deleterious effects that can occur when lithographically patterned substrates are exposed to various gaseous species during the functionalization process.


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