The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Aug. 24, 2012
Applicant:
Gary Chorng-jyh Wang, Cupertino, CA (US);
Inventor:
Gary Chorng-Jyh Wang, Cupertino, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/453 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bi-state-switch low-voltage fabrication technique is able to be used to construct microfluidic systems leveraging well-established low-voltage semiconductor fabrication technologies to achieve high-voltage droplet actuation applications with lower costs, smaller device sizes, and also less time. Also, the electrode cells are able to be made using the well-established low-voltage CMOS fabrication technologies, which can be used to make large-scale integrated microelectronics and microfluidics.
Wang, Gary Chorng-Jyh. (2014). High-voltage microfluidic droplets actuation by low-voltage fabrication technologies (U.S. Patent No. 8764958). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8764958
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile