The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Apr. 05, 2011
Applicants:

You-da Lin, Goleta, CA (US);

Hiroaki Ohta, Tokyo, JP;

Shuji Nakamura, Santa Barbara, CA (US);

Steven P. Denbaars, Goleta, CA (US);

James S. Speck, Goleta, CA (US);

Inventors:

You-Da Lin, Goleta, CA (US);

Hiroaki Ohta, Tokyo, JP;

Shuji Nakamura, Santa Barbara, CA (US);

Steven P. DenBaars, Goleta, CA (US);

James S. Speck, Goleta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.


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