The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Apr. 19, 2010
Applicants:

Santiago Iriarte, Valencia, ES;

Alberto Marinas, El Puig, ES;

Colm Donovan, Valencia, ES;

Eduardo Martinez, Valencia, ES;

Inventors:

Santiago Iriarte, Valencia, ES;

Alberto Marinas, El Puig, ES;

Colm Donovan, Valencia, ES;

Eduardo Martinez, Valencia, ES;

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A reference voltage generator circuit may include at least one MOS transistor and at least one bipolar transistor coupled together to provide an electrical path from an input reference potential to an output of the generator circuit. The electrical path may extend through a gate-to-source path of the MOS transistor and further through a base-to-emitter path of the bipolar transistor. The MOS transistor may be biased by a bias current that is proportional to T·μ(T), where T represents absolute temperature and μ(T) represents mobility of a MOS transistor in the bias current generator. Optionally, the reference voltage generator may include N MOS and M multiple bipolar transistors (N≧1, M≧1), and the output reference voltage may be N*V+M*Vas compared to the input reference potential.


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