The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

May. 22, 2009
Applicants:

Alexander Hoelke, Sarawak, MY;

Deb Kumar Pal, Sarawak, MY;

Pei Shan Chua, Sarawak, MY;

Gopalakrishnan Kulathu Sankar, Sarawak, MY;

Kia Yaw Kee, Sarawak, MY;

Yang Hao, Sarawak, MY;

Uta Kuniss, Elleben, DE;

Inventors:

Alexander Hoelke, Sarawak, MY;

Deb Kumar Pal, Sarawak, MY;

Pei Shan Chua, Sarawak, MY;

Gopalakrishnan Kulathu Sankar, Sarawak, MY;

Kia Yaw Kee, Sarawak, MY;

Yang Hao, Sarawak, MY;

Uta Kuniss, Elleben, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/76 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 29/407 (2013.01); H01L 29/405 (2013.01);
Abstract

The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.


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