The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
May. 27, 2010
Yoshinori Toumiya, Kanagawa, JP;
Kiyotaka Tabuchi, Kumamoto, JP;
Yasuyuki Shiga, Kumamoto, JP;
Iwao Sugiura, Kanagawa, JP;
Naoyuki Miyashita, Kanagawa, JP;
Masanori Iwasaki, Kanagawa, JP;
Katsunori Kokubun, Kanagawa, JP;
Tomohiro Yamazaki, Kanagawa, JP;
Yoshinori Toumiya, Kanagawa, JP;
Kiyotaka Tabuchi, Kumamoto, JP;
Yasuyuki Shiga, Kumamoto, JP;
Iwao Sugiura, Kanagawa, JP;
Naoyuki Miyashita, Kanagawa, JP;
Masanori Iwasaki, Kanagawa, JP;
Katsunori Kokubun, Kanagawa, JP;
Tomohiro Yamazaki, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.