The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Dec. 18, 2009
Hong-fei LU, Matsumoto, JP;
Hong-fei Lu, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
Plural island-form emitter cells () having a p-base region () and an nemitter region () are provided, distanced from each other, on a main surface of an nlayer (). A trench () deeper than the p-base region () is formed on either side of the emitter cell (). A first gate electrode () is embedded in the trench () across a first gate insulating film (). A second gate electrode () that electrically connects first gate electrodes () is provided, across a second gate insulating film (), on a surface of a region of the p-base region () sandwiched by the nemitter region (). A conductive region () that electrically connects second gate electrodes () is provided, across a third gate insulating film (), on a surface of the nlayer (). A contact region () that is isolated from the second gate electrode (), and that short circuits the nemitter region () and p-base region (), is provided.