The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 12, 2010
Masaaki Higuchi, Yokkaichi, JP;
Yoshio Ozawa, Yokohama, JP;
Katsuyuki Sekine, Yokkaichi, JP;
Ryota Fujitsuka, Mie-gun, JP;
Masaaki Higuchi, Yokkaichi, JP;
Yoshio Ozawa, Yokohama, JP;
Katsuyuki Sekine, Yokkaichi, JP;
Ryota Fujitsuka, Mie-gun, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.