The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Oct. 12, 2011
Mark Raffetto, Santa Barbara, CA (US);
Jayesh Bharathan, Cary, NC (US);
Kevin Haberern, Cary, NC (US);
Michael Bergmann, Chapel Hill, NC (US);
David Emerson, Chapel Hill, NC (US);
James Ibbetson, Santa Barbara, CA (US);
Ting LI, Ventura, CA (US);
Mark Raffetto, Santa Barbara, CA (US);
Jayesh Bharathan, Cary, NC (US);
Kevin Haberern, Cary, NC (US);
Michael Bergmann, Chapel Hill, NC (US);
David Emerson, Chapel Hill, NC (US);
James Ibbetson, Santa Barbara, CA (US);
Ting Li, Ventura, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.