The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jul. 31, 2012
Taku Kinoshita, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Takashi Kondo, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Taku Kinoshita, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Takashi Kondo, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.