The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8759845 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 24, 2014

Filed:

Jan. 21, 2009
Applicants:

Lukas Willem Snyman, Pretoria, ZA;

Monuko Du Plessis, Pretoria, ZA;

Inventors:

Lukas Willem Snyman, Pretoria, ZA;

Monuko Du Plessis, Pretoria, ZA;

Assignee:

Insiava (Pty) Limited, Pretoria, ZA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/167 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device () comprises a body () of a semiconductor material. A first junction region () is formed in the body between a first region () of the body of a first doping kind and a second region () of the body of a second doping kind. A second junction region () is formed in the body between the second region () of the body and a third region () of the body of the first doping kind. A terminal arrangement () is connected to the body for, in use, reverse biasing the first junction region () into a breakdown mode and for forward biasing at least part () of the second junction region (), to inject carriers towards the first junction region (). The device () is configured so that a first depletion region () associated with the reverse biased first junction region () punches through to a second depletion region associated with the forward biased second junction region ().


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