The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Apr. 06, 2010
Applicants:

Nir Tessler, Zichron Yaakov, IL;

Ariel Ben-sasson, Haifa, IL;

Inventors:

Nir Tessler, Zichron Yaakov, IL;

Ariel Ben-Sasson, Haifa, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); H01L 29/66757 (2013.01); H01L 27/12 (2013.01); H01L 29/66765 (2013.01); H01L 29/78696 (2013.01);
Abstract

An electronic device () is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure () which is enclosed between a dielectric layer () and an active element () of the electronic device (). The electrically-conductive perforated patterned structure () comprises a geometrical pattern defining an array of spaced-apart perforation regions () surrounded by continuous electrically conductive regions (). The pattern is such as to allow the active element () of the electronic device () to be in direct contact with said dielectric layer () aligned with the perforation regions (). A material composition of the device () and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure () and a desired profile of a charge carriers' injection barrier along said structure ().


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