The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 01, 2011
Seong Ran Jeon, Gwangju-si, KR;
Young Ho Song, Jeonju-si, KR;
Jae Bum Kim, Gwangju-si, KR;
Young Woo Kim, Gwangju-si, KR;
Woo Young Cheon, Gwangju-si, KR;
Jin Hong Kim, Gwangju-si, KR;
Seong Ran Jeon, Gwangju-si, KR;
Young Ho Song, Jeonju-si, KR;
Jae Bum Kim, Gwangju-si, KR;
Young Woo Kim, Gwangju-si, KR;
Woo Young Cheon, Gwangju-si, KR;
Jin Hong Kim, Gwangju-si, KR;
Korea Photonics Technology Institute, Gwangju, KR;
Abstract
The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.