The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jul. 13, 2011
Takeshi Yamaguchi, Kawasaki, JP;
Hirofumi Inoue, Kamakura, JP;
Reika Ichihara, Yokohama, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Takashi Shigeoka, Fujisawa, JP;
Katsuyuki Sekine, Yokkaichi, JP;
Shinya Aoki, Yokkaichi, JP;
Takeshi Yamaguchi, Kawasaki, JP;
Hirofumi Inoue, Kamakura, JP;
Reika Ichihara, Yokohama, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Takashi Shigeoka, Fujisawa, JP;
Katsuyuki Sekine, Yokkaichi, JP;
Shinya Aoki, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.