The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jan. 16, 2012
Urs Schoop, Tucson, AZ (US);
Walter Stoss, Tucson, AZ (US);
Nguyet Nguyen, Oro Valley, AZ (US);
Scott Wiedeman, Tucson, AZ (US);
Urs Schoop, Tucson, AZ (US);
Walter Stoss, Tucson, AZ (US);
Nguyet Nguyen, Oro Valley, AZ (US);
Scott Wiedeman, Tucson, AZ (US);
Hanergy Hi-Tech Power (HK) Limited, West KL, HK;
Abstract
Thin film photovoltaic cells and methods of manufacturing such cells that include one or more diffusion barrier layers configured to provide a relatively smooth growth surface for subsequent deposition of a p-type semiconductor layer. Diffusion barrier layers according to the present teachings may be amorphous, microcrystalline or nanocrystalline layers of materials including molybdenum, conductive oxides, conductive nitrides, conductive carbides, or mixtures thereof. In some cases a diffusion barrier layer may be configured to have surface roughness less than a predetermined threshold value.