The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Mar. 01, 2007
Applicants:

Tsutomu Shimayama, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Masaki Okamoto, Kanagawa, JP;

Inventors:

Tsutomu Shimayama, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Masaki Okamoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.


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