The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
May. 05, 2011
Ippei Kume, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Naoya Furutake, Kanagawa, JP;
Shinobu Saitou, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Ippei Kume, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Naoya Furutake, Kanagawa, JP;
Shinobu Saitou, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.