The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 10, 2010
Applicants:
Won-mook Choi, Hwaseong-si, KR;
Jae-young Choi, Suwon-si, KR;
Jin Zhang, Beijing, CN;
Guo Hong, Beijing, CN;
Inventors:
Won-mook Choi, Hwaseong-si, KR;
Jae-young Choi, Suwon-si, KR;
Jin Zhang, Beijing, CN;
Guo Hong, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes.