The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 13, 2012
Bradley David Sucher, Murphy, TX (US);
Rick L. Wise, Fairview, TX (US);
Bradley David Sucher, Murphy, TX (US);
Rick L. Wise, Fairview, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for fabricating an integrated circuit (IC) includes initial oxidizing of a semiconductor surface of a substrate. The substrate is heated after the initial oxidizing using a plurality of furnace processing steps which each include a peak processing temperature between 800° C. and 1300° C. The furnace processing steps include at least one accelerated processing step having an accelerated ramp portion in a temperature range between 800° C. and 1250° C. providing an accelerated ramp-up rate and/or an |accelerated ramp-down rate| of at least (≧) 5.5° C./min.