The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Apr. 25, 2012
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Junjun LI, Essex Junction, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Junjun Li, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material.