The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Dec. 22, 2011
Alfonso Patti, Tremestieri Etneo, IT;
Antonino Schillaci, Messina, IT;
Bartolome Marrone, Catania, IT;
Gianleonardo Grasso, Giarre, IT;
Rajesh Kumar, Singapore, SG;
Alfonso Patti, Tremestieri Etneo, IT;
Antonino Schillaci, Messina, IT;
Bartolome Marrone, Catania, IT;
Gianleonardo Grasso, Giarre, IT;
Rajesh Kumar, Singapore, SG;
STMicroelectronics S.r.l., Agrate Brianza (MB), IT;
STMicroelectronics Asia Pacific Pte. Ltd., Singapore, SG;
Abstract
A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer.