The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Nov. 02, 2010
Applicants:
Gabriel Kittler, Ilmenau, DE;
Ralf Lerner, Erfurt, DE;
Inventors:
Gabriel Kittler, Ilmenau, DE;
Ralf Lerner, Erfurt, DE;
Assignee:
X—FAB Semiconductor Foundries AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for producing silicon semiconductor wafers and components having layer structures of III-V layers for integrating III-V semiconductor components. The method employs SOI silicon semiconductor wafers having varying substrate orientations, and the III-V semiconductor layers are produced in trenches () produced by etching within certain regions (), which are electrically insulated from each other, of the active semiconductor layer () by means of a cover layer or cover layers () using MOCVD methods.