The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Dec. 13, 2010
Hiroki Mori, Osaka, JP;
Masaki Saitoh, Osaka, JP;
Takumi Tomita, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a method of manufacturing a thin film transistor device that includes the following steps: forming slanted portionsin edges of crystalline semiconductor films(and); forming a resist filmon the crystalline semiconductor filmso as to expose the slanted portionsand so as to cover the entire crystalline semiconductor film; performing half exposure of the resist filmthat is formed on the crystalline semiconductor film; injecting a p-type impurity only into the slanted portionsof the crystalline semiconductor film; removing the resist filmthat is formed on the crystalline semiconductor filmby ashing; and injecting the p-type impurity into the entire crystalline semiconductor film