The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Mar. 14, 2012
Applicants:

SO Hye Cho, Seoul, KR;

Jong Ku Park, Gyeonggi-do, KR;

Bong Geun Song, Seoul, KR;

Kyunghoon Kim, Daejeon, KR;

Hyung Ho Park, Seoul, KR;

Inventors:

So Hye Cho, Seoul, KR;

Jong Ku Park, Gyeonggi-do, KR;

Bong Geun Song, Seoul, KR;

Kyunghoon Kim, Daejeon, KR;

Hyung Ho Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for producing a copper indium selenium (CIS) or copper indium gallium selenium (CIGS) thin-film light-absorbing layer. The method includes forming a coating layer of CIGS slurry, removing a solvent, a dispersant and a binder from the coating layer to form a powder coat layer, pressing the powder coat layer to improve its particle packing density, and heating the powder layer to form a dense thin film. The method uses a powder process as a non-vacuum process to produce a CIS or CIGS thin film in high yield at low cost. Further disclosed is a method for manufacturing a thin-film solar cell including the production method.


Find Patent Forward Citations

Loading…