The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Apr. 20, 2012
Applicant:

Alexander Mikhailovich Shukh, Savage, MN (US);

Inventor:

Alexander Mikhailovich Shukh, Savage, MN (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/08 (2006.01); G11C 11/02 (2006.01); G11C 11/15 (2006.01); H01F 10/14 (2006.01); H01F 10/16 (2006.01); G01R 33/09 (2006.01);
U.S. Cl.
CPC ...
G11C 11/02 (2013.01); G11C 11/15 (2013.01); H01F 10/14 (2013.01); H01F 10/16 (2013.01); G01R 33/098 (2013.01);
Abstract

A magnetoresistive element that includes a free ferromagnetic layer comprising a reversible magnetization directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a fixed magnetization directed substantially perpendicular to the film surface, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the free and pinned layers contain at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the free layer, the tunnel barrier layer, and the pinned layer have a coherent body-centered cubic structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses a magnetization direction of the free layer.


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