The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 05, 2010
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A photoelectrochemical cell () includes: a semiconductor electrode () including a substrate (), a first n-type semiconductor layer () disposed on the substrate (), and a second n-type semiconductor layer () and a conductor () disposed apart from each other on the first n-type semiconductor layer (); a counter electrode () connected electrically to the conductor (); an electrolyte () in contact with surfaces of the second n-type semiconductor layer () and the counter electrode (); and a container () accommodating the semiconductor electrode (), the counter electrode () and the electrolyte (). In the semiconductor electrode (), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (), (II) a Fermi level of the first n-type semiconductor layer () is higher than a Fermi level of the second n-type semiconductor layer (), and (III) a Fermi level of the conductor () is higher than the Fermi level of the first n-type semiconductor layer (). The photoelectrochemical cell () generates hydrogen by irradiation of the second n-type semiconductor layer () with light.