The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
May. 12, 2009
Julien Claudon, Saint Martin Le Vinoux, FR;
Jean-michel Gérard, Saint Martin d'Urlage, FR;
Vincent Berger, Ivry-sur-Seine, FR;
Giuseppe Leo, Fontanay sous Bois, FR;
Alessio Andronico, Rome, IT;
Julien Claudon, Saint Martin Le Vinoux, FR;
Jean-Michel Gérard, Saint Martin d'Urlage, FR;
Vincent Berger, Ivry-sur-Seine, FR;
Giuseppe Leo, Fontanay sous Bois, FR;
Alessio Andronico, Rome, IT;
Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;
Universite Paris Diderot—Paris 7, Paris Cedex, FR;
Abstract
A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.5 to 5 THz, the radiation being obtained through the difference in frequency of the two whispering gallery modes, the cylindrical geometry of the heterostructure ensuring phase tuning between the two optical whispering gallery modes belonging to the near-infrared spectrum and the terahertz mode at the difference in frequency; a second and a third semiconductor material layer, each having an optical index weaker than the index of the material of the first layer and located on both sides of the first layer; at least one metal layer located on one end of the hetero structure.