The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Oct. 27, 2011
Applicants:

Huazhang Chen, Shenzhen, CN;

Jianli Liu, Shenzhen, CN;

Xiaojun Cui, Shenzhen, CN;

Inventors:

Huazhang Chen, Shenzhen, CN;

Jianli Liu, Shenzhen, CN;

Xiaojun Cui, Shenzhen, CN;

Assignee:

ZTE Corporation, Shenzhen, Guangdong Province, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a Doherty power amplifier and a method for implementing the Doherty power amplifier. The Doherty power amplifier includes a peak amplifying branch and a carrier amplifying branch, wherein, the peak amplifying branch includes a radio frequency switch, and the radio frequency switch is configured to control on/off of a last stage peak power amplifier in the peak amplifying branch; wherein, a high voltage heterojunction bipolar transistor (HVHBT) device is adopted for a last stage carrier power amplifier of the carrier amplifying branch, and a laterally diffused metal oxide semiconductor (LDMOS) device is adopted for the last stage peak power amplifier of the peak amplifying branch of the power amplifier. By the present invention, it avoids that the peak power consumption is increased when the peak power amplifier is on ahead of time and enhances the efficiency of the whole power amplifier.


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