The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Apr. 26, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shinji Saito, Kanagawa, JP;

Maki Sugai, Tokyo, JP;

Eiji Muramoto, Kanagawa, JP;

Shinya Nunoue, Chiba, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-Ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01);
Abstract

A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.


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