The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Apr. 14, 2009
Hua-quen Tserng, Dallas, TX (US);
Deep C. Dumka, Richardson, TX (US);
Martin E. Jones, Plano, TX (US);
Charles F. Campbell, McKinney, TX (US);
Anthony M. Balistreri, Plano, TX (US);
Hua-Quen Tserng, Dallas, TX (US);
Deep C. Dumka, Richardson, TX (US);
Martin E. Jones, Plano, TX (US);
Charles F. Campbell, McKinney, TX (US);
Anthony M. Balistreri, Plano, TX (US);
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.