The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

May. 22, 2012
Applicants:

Ki Hong Lee, Gyeonggi-do, KR;

Seung Ho Pyi, Gyeonggi-do, KR;

Sung Chul Shin, Gyeonggi-do, KR;

Inventors:

Ki Hong Lee, Gyeonggi-do, KR;

Seung Ho Pyi, Gyeonggi-do, KR;

Sung Chul Shin, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A 3-dimensional (3-D) non-volatile memory device includes a first channel protruding from a substrate, a selection gate formed on sidewalls of the first channel and in an L shape, and a gate insulating layer interposed between the first channel and the selection gate and surrounding the first channel. A method of manufacturing a 3-D non-volatile memory device includes forming first channels protruding from a substrate, forming a first gate insulating layer surrounding the first channels, and forming first selection gates having an L shape on sidewalls of the first channels on which the first gate insulating layers are formed.


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