The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Apr. 18, 2011
Applicant:

Choul Joo Ko, Seongnam-si, KR;

Inventor:

Choul Joo Ko, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Lateral Double Diffused Metal-Oxide-Semiconductor (LDMOS) semiconductor device includes a substrate; a gate region, a source region, and a drain region on and/or over the substrate, a well region at one side of the drain region, and a guardring region disposed at one side of the well region and connected electrically to the well region.


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