The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Feb. 16, 2012
Kentaro Ikeda, Kanagawa, JP;
Mayumi Morizuka, Kanagawa, JP;
Kentaro Ikeda, Kanagawa, JP;
Mayumi Morizuka, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes: a first semiconductor layer made of AlGaN (0<x<1) or InAlN (0≦y≦1); a first semiconductor region, an insulating film, and an anode electrode that are formed on the same plane of the first semiconductor layer, and are made of undoped, n-type, or p-type GaN; and a cathode electrode formed on the first semiconductor region. In this semiconductor device, the first semiconductor region, the insulating film, and the anode electrode are joined to the first semiconductor layer. The insulating film is joined to the first semiconductor layer between the first semiconductor region and the anode electrode. The junction between the anode electrode and the first semiconductor layer is an ohmic junction. The junction between the cathode electrode and the first semiconductor region is an ohmic junction.