The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Feb. 02, 2011
Kazushige Hotta, Osaka, JP;
Kazushige Hotta, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a semiconductor deviceA that has first lightly doped drain regionsAandAbetween a source regionAand a channel regionAof a first conductive-type driver circuit TFTAand/or between a drain regionAand the channel regionAof the first conductive-type driver circuit TFTA, and second lightly doped drain regionsC andC between a source regionC and a channel regionC of a first conductive-type pixel TFTC and/or between a drain regionC and the channel regionC of the first conductive-type pixel TFTC, in which the first lightly doped drain regionsAandAhave first conductive-type impurities nat a first impurity concentration C, and the second lightly doped drain regionsC andC have first conductive-type impurities nat the first impurity concentration Cand second conductive-type impurities p2 at a second impurity concentration C.