The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Dec. 07, 2010
Chiyoko Takemura, Tokyo, JP;
Tomonori Kawamura, Tokyo, JP;
Chiyoko Takemura, Tokyo, JP;
Tomonori Kawamura, Tokyo, JP;
Konica Minolta Holdings, Inc., Tokyo, JP;
Abstract
Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.