The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Aug. 30, 2010
Mikael T Bjoerk, Zurich, CH;
Oliver Hayden, Herzogenaurach, DE;
Joachim Knoch, Castrop-Rauxel, DE;
Emanuel Loertscher, Zurich, CH;
Heike E Riel, Zurich, CH;
Walter Heinrich Riess, Zurich, CH;
Heinz Schmid, Zurich, CH;
Mikael T Bjoerk, Zurich, CH;
Oliver Hayden, Herzogenaurach, DE;
Joachim Knoch, Castrop-Rauxel, DE;
Emanuel Loertscher, Zurich, CH;
Heike E Riel, Zurich, CH;
Walter Heinrich Riess, Zurich, CH;
Heinz Schmid, Zurich, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.