The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Mar. 11, 2011
Ronghua Wei, San Antonio, TX (US);
Richard L. Johnson, San Marcos, TX (US);
Christopher Rincon, San Antonio, TX (US);
Michael A. Miller, San Antonio, TX (US);
Ronghua Wei, San Antonio, TX (US);
Richard L. Johnson, San Marcos, TX (US);
Christopher Rincon, San Antonio, TX (US);
Michael A. Miller, San Antonio, TX (US);
Southwest Research Institute, San Antonio, TX (US);
Abstract
A method for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein and applying tension to said gas feed tube by affixing a spring to one end of said gas feed tube and said vacuum chamber. The method may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.