Semiconductor single crystal production device and producing method therefor

Abstract

Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield () made of a heat insulating material is provided outside a heater (), and a plurality of exhaust pipes () are provided between the heater () and the heat shield (). The plurality of exhaust pipes () are communicated with a plurality of exhaust ports (B ()) provided at a bottom of a chamber