The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Jul. 05, 2007
Applicant:
Hyon-jong Cho, Gyeongsangbuk-do, KR;
Inventor:
Hyon-Jong Cho, Gyeongsangbuk-do, KR;
Assignee:
Siltron, Inc., Gumi-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/14 (2006.01); C30B 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.