The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2014

Filed:

Aug. 07, 2013
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Erik Pedersen, Klarup, DK;

Søren Deleuran Laursen, Vestbjerg, DK;

Jean-Christophe Berchtold, Carlsbad, CA (US);

Assignee:

RF Micro Devices, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 11/12 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power amplification device is disclosed that includes a power amplification circuit operable to amplify a radio frequency (RF) signal in accordance with an amplification gain, and a voltage regulation circuit operable to generate a regulated voltage. A regulated voltage level of the regulated voltage sets the amplification gain. To help prevent the voltage regulation circuit from saturating, the voltage regulation circuit is configured to reduce a voltage adjustment gain when the regulated voltage level reaches a threshold voltage level. In one embodiment, the threshold voltage level is set to be higher when a band-select signal indicates that the RF signal is being transmitted within a first frequency band, and is set to be lower when the band-select signal indicates that the RF signal is being transmitted within a second frequency band. The spectral performance of the power amplification device thus improves with regard to the second frequency band.


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