The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Sep. 25, 2008
Ryoji Hiroyama, Kyo-tanabe, JP;
Yasuto Miyake, Hirakata, JP;
Yasumitsu Kuno, Tottori, JP;
Yasuyuki Bessho, Uji, JP;
Masayuki Hata, Takatsuki, JP;
Ryoji Hiroyama, Kyo-tanabe, JP;
Yasuto Miyake, Hirakata, JP;
Yasumitsu Kuno, Tottori, JP;
Yasuyuki Bessho, Uji, JP;
Masayuki Hata, Takatsuki, JP;
Future Light, LLC, Mountain View, CA (US);
Abstract
A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device () includes a nitride-based semiconductor device layer () formed on a main surface of a (1-100) plane of a substrate (), having a light-emitting layer () having a main surface of a (1-100) plane, a facet () formed on an end of a region including the light-emitting layer () of the nitride-based semiconductor device layer (), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (), and a reflection surface () formed on a region opposed to the facet () of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (), extending in a direction inclined at an angle θ(about) 62° with respect to the facet ().